FQA90N15-F109 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
* Low Gate Charge (Typ. 220 nC)
* Low Crss (Typ. 200 pF)
* 100% Avalanche Tested
* 175°C Maximum Junc.

Application

such as audio amplifier, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power suppl.

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior.

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